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| BSP 320 S SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Avalanche rated * VGS(th)= 2.1 ... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 60 V ID 2.9 A RDS(on) 0.12 Package Marking Ordering Code BSP 320 S SOT-223 Q67000-S4001 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 C TA = 100 C ID A 2.9 1.85 DC drain current, pulsed TA = 25 C IDpuls 11.6 E AS Avalanche energy, single pulse ID = 2.9 A, V DD = 25 V, RGS = 25 L = 14.3 mH, Tj = 25 C mJ 60 E AR IAR Avalanche energy, periodic limited by Tj(max) Avalanche current, repetitive,limited by Tj(max) Reverse diode dv/dt IS = 2.9 A, VDS = 40 V, di/dt = 200 A/s Tjmax = 150 C 0.18 2.9 A KV/s dv/dt 6 V GS P tot Gate source voltage Power dissipation TA = 25 C 20 1.8 V W Semiconductor Group 1 29/01/1998 BSP 320 S Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 C 70 17 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection *) MIL STD 883, Method 3015, Class 2 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 C V (BR)DSS V 60 - Gate threshold voltage V GS=V DS, ID = 20 A V GS(th) 2.1 IDSS 3 4 A Zero gate voltage drain current V DS = 60 V, V GS = 0 V, Tj = -40 C V DS = 60 V, V GS = 0 V, Tj = 25 C V DS = 60 V, V GS = 0 V, Tj = 125 C IGSS 0.1 - 0.1 1 100 nA Gate-source leakage current V GS = 20 V, VDS = 0 V RDS(on) 10 100 Drain-Source on-state resistance V GS = 10 V, ID = 2.9 A 0.09 0.12 Semiconductor Group 2 29/01/1998 BSP 320 S Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit Transconductance V DS 2 * ID * RDS(on)max, ID = 2.9 A gfs S 2.5 pF 275 340 Input capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Ciss Output capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz Coss Crss 90 120 Reverse transfer capacitance V GS = 0 V, V DS = 25 V, f = 1 MHz td(on) 50 65 ns Turn-on delay time V DD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 tr 11 17 Rise time V DD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 td(off) 25 40 Turn-off delay time V DD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 tf 25 40 Fall time V DD = 30 V, VGS = 10 V, ID = 2.9 A RG = 33 Qg(th) 35 55 nC Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS 0 to 1 V Qg(7) Qg(total) 0.24 0.3 Gate Charge at 7.0 V V DD = 40 V, ID = 2.9 A, V GS 0 to 7 V 7.4 9.3 Gate Charge total V DD = 40 V, ID = 2.9 A, V GS 0 to 10 V V (plateau) 9.7 12 V Gate plateau voltage V DS = 15 V, ID = 2.9 A - 4.7 - Semiconductor Group 3 29/01/1998 BSP 320 S Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit Reverse Diode Inverse diode continuous forward current TA = 25 C IS A 2.9 Inverse diode direct current,pulsed TA = 25 C ISM V SD - 11.6 V Inverse diode forward voltage V GS = 0 V, IF = 5.8 A trr 0.94 1.2 ns Reverse recovery time V R = 30 V, IF=lS, diF/dt = 100 A/s Qrr 45 56 C Reverse recovery charge V R = 30 V, IF=lS, diF/dt = 100 A/s - 0.08 0.12 Semiconductor Group 4 29/01/1998 BSP 320 S Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 3.0 A 2.6 2.0 W Ptot 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 ID 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25C Transient thermal impedance Zth JA = (tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 10 -3 single pulse 10 -4 10 -2 0.05 0.02 0.01 10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 29/01/1998 BSP 320 S Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 6.5 A 5.5 ID 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 c ab d e l Ptot = 2W k Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.38 ji h g VGS [V] a 2.5 0.32 RDS (on) 0.28 0.24 0.20 a b fb c d e f g h i j k l 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 9.0 10.0 c 0.16 d 0.12 g e f h 0.08 0.04 0.00 V 5.0 0.0 1.0 2.0 3.0 4.0 A 5.5 VGS [V] = a 4.0 3.5 3.0 2.5 4.5 b 5.0 c 5.5 d 6.0 f e 7.0 8.0 g h 9.0 10.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 14 A ID 10 8 6 4 2 0 0 1 2 3 4 5 V VGS 7 Semiconductor Group 6 29/01/1998 BSP 320 S Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 2.9 A, VGS = 10 V 0.32 Gate threshold voltage V GS(th) = f ( Tj ) parameter:VGS=VDS, ID =20A 5.0 V 4.4 VGS(th) RDS (on) 0.24 4.0 3.6 0.20 3.2 2.8 0.16 98% typ 2.4 2.0 1.6 max 0.12 0.08 typ 1.2 0.8 0.04 0.4 0.00 -60 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 140 V Tj min 200 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 2 A C pF Ciss IF 10 1 10 2 Coss 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 29/01/1998 BSP 320 S Avalanche energy EAS = (Tj) parameter: ID = 2.9 A, VDD = 25 V RGS = 25 , L = 14.3 mH 65 mJ 55 EAS 50 45 40 35 Typ. gate charge VGS = (QGate) parameter: ID puls = 3 A 16 V VGS 12 10 8 30 25 20 15 10 5 0 20 40 60 80 100 120 C 160 0 0 2 4 6 0,2 VDS max 0,8 VDS max 2 4 6 8 10 14 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj) 71 V 68 V(BR)DSS 66 64 62 60 58 56 54 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 29/01/1998 |
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